Laser-driven spintronic memory device switches 1,000 times faster than DRAM — non-volatile device switches in 40 picoseconds while generating almost no heat

University of Tokyo researchers demonstrated an Mn3Sn spintronic memory device that switches in just 40 picoseconds.

The non-volatile device retains data without power and can be triggered by either electrical pulses or laser-generated photocurrent pulses.

The team’s laser-driven approach also used a telecom-band laser and photodiode, showing a path to ultrafast, low-heat memory.

The work could help ease data-movement energy and cooling bottlenecks in AI and high-performance computing by combining speed with data retention.