3D X-DRAM Hits Proof-of-Concept, HBM-Replacement with 10x Density vs Traditional DRAM & High-Yield Memory Design

NEO Semiconductor says it has built proof-of-concept test chips for 3D X-DRAM, a DRAM concept using a 3D NAND-like process.

The company claims the design could deliver up to 10x higher density than conventional DRAM while keeping fast read/write performance and long data retention.

Because it is designed to fit existing manufacturing infrastructure, 3D X-DRAM could offer a lower-cost path to more memory bandwidth for AI and server systems.

If production validation succeeds, the technology could become a potential alternative to HBM and other high-bandwidth memory solutions.