NEO Semiconductor’s revolutionary 3D X-DRAM for AI processors passes proof-of-concept validation; company secures funding to develop next-generation memory as an HBM alternative

NEO Semiconductor says its 3D X-DRAM has passed proof-of-concept validation.

The chip was built using existing 3D NAND manufacturing methods, suggesting a potentially faster path to production.

The company also secured new strategic investment led by Stan Shih to fund further development.

If it scales, 3D X-DRAM could provide a lower-cost, lower-power memory option for AI processors and reduce pressure on HBM supply.