Intel’s Revolutionary ZAM Memory, A Low-Power & High Density HBM Replacement, Receives Big Boost From Japan

Japan’s NEDO has selected Intel and SoftBank’s SAIMEMORY ZAM program for subsidy-backed development.

ZAM, or Z-Angle Memory, is aimed at delivering lower power use, higher density, and wide bandwidth.

The project is being positioned as a potential alternative to HBM for AI and HPC systems.

Government support could help accelerate development amid growing memory supply and performance constraints.