US scientists unlock hidden magnetism in ultrathin material for faster memory tech

Researchers at Rice University, the University of Minnesota, and the Paul Scherrer Institute found that ultrathin ruthenium dioxide can develop magnetic behavior when lattice strain is applied.

Using spin texture mapping and spin-resolved photoemission, they observed signs of altermagnetism in the few-layer film, unlike bulk ruthenium dioxide.

The study, published in Science Advances, suggests strain could be used to control magnetism in quantum materials.

That could help enable smaller, faster, and more energy-efficient memory chips and spintronic devices.