Hidden 0.14 nm gap threatens future 2D chips, but ‘zipper materials’ may help

TU Wien researchers found that a tiny gap of about 0.14 nanometers can form between many 2D materials and the oxide insulators used in transistors.

That separation weakens gate control and can limit chip miniaturization, even for materials like graphene and molybdenum disulfide that perform well in the lab.

The team says stronger-bonding “zipper materials” could close the gap and improve transistor design.

The finding suggests future chip scaling may depend less on the intrinsic quality of 2D materials and more on how well they interface with real devices.