Samsung Borrows NAND Trick to Crack Next-Gen DRAM, While SK hynix Bets on Vertical Stacking to Win the AI Memory War

Samsung is pushing to apply NAND-style manufacturing ideas and GAAFET concepts to next-generation DRAM.

SK hynix is testing vertically stacked 4F²-style DRAM structures as its own future approach.

Both companies are racing to have their design chosen as the industry standard for future DRAM chips.

The winner could gain a strategic edge in a memory market being reshaped by AI data center demand.