Samsung Breaks the 10nm DRAM Barrier With New 4F Cell Structure That Boosts Density By Up to 50%

Samsung reportedly has a working die for its 10a DRAM process, pushing DRAM below the 10nm range.

The design uses a 4F square cell structure and vertical channel transistors to boost cell density and efficiency.

The new process could raise DRAM density by up to 50%, helping Samsung gain an early edge in next-gen memory for AI hardware.

Mass production is reportedly targeted for 2028, according to The Elec.